Impact of Source Material Selection on
Dielectric-Modulated Tunnel Field-Effect Transistor Biosensor Performance

M. I. A. Abdullah2, M. F. M. Fathil1 *, M. K. Md Md Arshad1, 2, M. N. M. Nuzaihan1, W. W. Liu1, S. A. Shamsuddin1, 3, N. I. Ramzan1, S. F. A. Rahman4, J. M. Ismail1, and M. I. A Azan1

1 Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Perlis, Malaysia

2 Faculty of Electronic Engineering & Technology, Universiti Malaysia Perlis, Perlis, Malaysia
3 Faculty of Mechanical Engineering & Technology, Universiti Malaysia Perlis, Perlis,
Malaysia
4 School of Electrical and Electronic Engineering, Engineering Campus,
Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang, Malaysia
mohamadfaris@unimap.edu.my

Abstract. A biosensor is a device that generates signals proportional to the concentration of an analyte, enabling the measurement of biological or chemical reactions. The dielectric-modulated tunnel field-effect transistor (DM-TFET)–based biosensor has gained significant attention in recent years due to its low subthreshold swing (SS), rapid detection capability, and low power consumption. It integrates the drain, channel, source, and sensing region into a single device. By modulating the tunneling barrier, the biosensor operates based on variations in biomolecule properties within the nanogap. Limitations in other devices, particularly in sensitivity and selectivity, have motivated the adoption of the DM-TFET, as it can detect both charged and neutral biomolecules more effectively than conventional FET biosensors. In contrast, MOSFET-based biosensors suffer from higher leakage currents, larger subthreshold swing, and low Ion/Ioff ratios. This study investigates the impact of different source materials on the performance of DM-TFET–based biosensors for biomolecule detection using semiconductor device technology computer-aided design (TCAD). Device structures employing silicon, indium arsenide, and indium antimonide as source materials were modeled in the SILVACO ATLAS simulator. Simulations were performed with nanogap dielectric constants of 1, 4, 6.3, 8, 10, and 12, representing different biomolecules. Variations in drain current were interpreted as biomolecule detection events, and device sensitivity was evaluated. Data analysis revealed that InSb, with the lowest energy bandgap, achieved the highest drain current among the tested materials. InSb also exhibited the highest sensitivity value of 8.337 μA, indicating its superior potential for achieving enhanced biosensor performance.

Keywords: Biosensor, Dielectric-modulated field-effect transistor, Source material, Semiconductor device technology computer-aided design (TCAD).