Speaker
Description
A biosensor is a device that generates signals proportional to the concentra-tion of an analyte, enabling the measurement of biological or chemical reac-tions. The dielectric-modulated tunnel field-effect transistor (DM-TFET)–based biosensor has gained significant attention in recent years due to its low subthreshold swing (SS), rapid detection capability, and low power consumption. It integrates the drain, channel, source, and sensing region in-to a single device. By modulating the tunneling barrier, the biosensor oper-ates based on variations in biomolecule properties within the nanogap. Limitations in other devices, particularly in sensitivity and selectivity, have motivated the adoption of the DM-TFET, as it can detect both charged and neutral biomolecules more effectively than conventional FET biosen-sors. In contrast, MOSFET-based biosensors suffer from higher leakage cur-rents, larger subthreshold swing, and low Ion/Ioff ratios. This study investi-gates the impact of different source materials on the performance of DM-TFET–based biosensors for biomolecule detection using semiconductor device technology computer-aided design (TCAD). Device structures em-ploying silicon, indium arsenide, and indium antimonide as source materi-als were modeled in the SILVACO ATLAS simulator. Simulations were performed with nanogap dielectric constants of 1, 4, 6.3, 8, 10, and 12, rep-resenting different biomolecules. Variations in drain current were interpret-ed as biomolecule detection events, and device sensitivity was evaluated. Data analysis revealed that InSb, with the lowest energy bandgap, achieved the highest drain current among the tested materials. InSb also exhibited the highest sensitivity value of 8.337 μA, indicating its superior potential for achieving enhanced biosensor performance.
